ty n-channel mosfet RUC002N05 ? structure ? dimensions (unit : mm) ? features 1) high speed switing. 2) small package(sst3). 3)ultra low voltage dr ive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code t116 basic ordering unit (pieces) 3000 RUC002N05 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 50 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 150 ma pulsed i sp 800 ma power dissipation p d 200 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * *2 *1 *1 sst3 a bbreviated symbol : rh (1) gate (2) source (3) drain ? 1 body diode ? 2 esd protection diode (1) (2) ? 2 ? 1 (3) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 50 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =50v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma -1.62.2 i d =200ma, v gs =4.5v -1.72.4 i d = 200ma, v gs =2.5v -1.92.7 i d = 100ma, v gs =1.8v -2.04.0 i d =40ma, v gs =1.5v -2.47.2 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 0.4 - - s i d =200ma, v ds =10v input capacitance c iss -25-pfv ds =10v output capacitance c oss -6-pfv gs =0v reverse transfer capacitance c rss -3-pff=1mhz turn-on delay time t d(on) -4-nsi d =100ma, v dd 30v rise time t r -6-nsv gs =4.5v turn-off delay time t d(off) -15-nsr l =300 ? fall time t f -55-nsr g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd --1.2vi s =200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RUC002N05 product specification
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